Emerging Nanoelectronic Technology and Integrated Systems Laboratory
Emerging Nanoelectronic Technology and Integrated Systems Laboratory
We (ENTIS) design, fabricate, and evaluate emerging nanoelectronic devices such as
1) 2-terminal devices (memristors, or resistive switching devices: RRAM, PCM, Interfacial devices, etc.)
2) 3-terminal field-effect transistor (FET) based devices
3) High-density array integration for parallel operation
As Moore's Law approaches its scalability limit, the demand for innovative comuting device has sharply increased. Furthermore, the rapid growth of arificial intelligence (AI) leads to the consumption of massive amounts of parameters and computational power, posing a gradual shift to POST-Von Neumann architecture. Neuromorphic computing systems based on emerging devices have emerged as a promising candidate, collecting significant attention for their potential to perform AI computations with much lower energy consumption and reduced data movement.
However, conventional emerging devices suffer from unavoidable spatial-temporal variation due to uncontrollable and stochastic operation mechanisms. This reliability issue is one of the key hurdles preventing further progess innovel computing systems based on these devices. Additionally, some devices are hard to satisfy Back-End-of-Line (BEOL) compatible process for high-density vertical integration.
Our emerging devices have attracted tremendous attention as possible candidates for many applications such as neuromorphic computing hardware, next-generation memory cells, logic applications, and security applications (Please refer to our Publications tab). The inherent memory effect in our emerging devices enables efficient big-data storage and parallel write/read-out systems. Other superior properties such as high density, low power consumption, long cycling endurance, and sub-nanosecond switching speed have been also demonstrated in our emerging devices as well.
We are now developing a new strategy to achieve uniform and highly reliable switching through CMOS compatible materials/fabrication steps. Another focus of our team is to design nano technology emerging devices for the next generation of artificial intelligence such as spiking neural networks (SNN) and stochastic computing.
Specifically, we are focusing on 1) novel device fabrication, 2) integrated system development, and 3) application development using our devices and systems.
